This paper presents for the first time the effect of strain on the electrical conductance of p-type nocrystalline SiC grown on a Si substrate. The gauge factor of the p-type nocrystalline SiC was found to be 14.5 which is one order of magnitude larger than that in most metals. This result indicates that mechanical strain has a significant influence on the electrical conductance of p-type nocrystalline SiC, which is promising for mechanical sensing applications in harsh environments.
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