-
Altissimo, M., Iacopi, A., Hold, L., Matruglio, A., Zucchiatti, P., Vaccari, L., … Gianoncelli, A. (2018). Silicon Carbide membranes as substrate for Synchrotron measurements.
Journal of Instrumentation,
13(5), C05017–1–C05017–10.
-
Dinh, T., Phan, H. P., Nguyen Tuan, K., Balakrishnan, V., Cheng, H.-H., Hold, L., … Dao, D. (2018). Unintentionally doped epitaxial 3C-SiC (111) nanothin film as material for highly sensitive thermal sensors at high temperatures.
IEEE Electron Device Letters,
39(4), 580–583.
-
Iqbal, A., Walker, G., Hold, L., Fernandes, A., Tanner, P., Iacopi, A., & Mohd-Yasin, F. (2018). The sputtering of AlN films on top of on- and off-axis 3C-SiC (111)/Si (111) substrates at various substrate temperatures.
Journal of Materials Science: Materials in Medicine,
29(3), 2434–2446.
-
Md Foisal, A., Dinh, T., Iacopi, A., Hold, L., Streed, E., & Dao, D. (2018). Optical and Electrical Characterizations of Nanoscale Robust 3C-SiC Membrane for UV Sensing Applications.
Key Engineering Materials,
775, 278–282.
-
Md Foisal, A., Dinh, T., Tanner, P., Phan, H. P., Nguyen, N.-T., Iacopi, A., … Dao, D. (2018). Ultraviolet and Visible Photodetection Using 3C-SiC/Si Hetero-Epitaxial Junction. Presented at the KES-SDM 2018, Gold Coast, Australia (2018).
-
Nguyen Tuan, K., Phan, H. P., Kamble, H., Vadivelu, R., Dinh, T., Iacopi, A., … Dao, D. (2018). Ultra-thin LPCVD silicon carbide membrane: A promising platform for bio-cell culturing. Presented at the MEMS 2018, Belfast, United Kingdom (2018).
-
Phan, H. P., Dowling, K. M., Nguyen Tuan, K., Chapin, C. A., Dinh, T., Miller, R. A., … Nguyen, N.-T. (2018). Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures.
RSC Advances,
8(52), 29976–29979.
-
Phan, H. P., Nguyen Tuan, K., Dinh, T., Cheng, H.-H., Mu, F., Iacopi, A., … Nguyen, N.-T. (2018). Strain effect in highly-doped n-type 3C-SiC-on-glass substrate for mechanical sensors and mobility enhancement.
Physica Status Solidi A: Applications and Materials Science,
215(24), 1800288–1–1800288–6.
-
Qamar, A., Dinh, T., Jafari, M., Iacopi, A., Dimitrijev, S., & Dao, D. (2018). A large pseudo-Hall effect in n-type 3C-SiC(1 0 0) and its dependence on crystallographic orientation for stress sensing applications.
Materials Letters,
213, 11–14.
-
Iqbal, A., Walker, G., Hold, L., Fernandes, A., Iacopi, A., & Mohd-Yasin, F. (2017). DC sputtering of highly c-axis AlN films on top of 3C-SiC (111)-on-Si (111) substrates under various N2 concentrations.
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics,
35(6), 06GH01–1–06GH01–8.
-
Nguyen Tuan, K., Phan, H. P., Kamble, H., Vadivelu, R., Dinh, T., Iacopi, A., … Dao, D. (2017). Superior Robust Ultrathin Single-Crystalline Silicon Carbide Membrane as a Versatile Platform for Biological Applications.
ACS Applied Materials and Interfaces,
9, 41641–41647.
-
Phan, H. P., Cheng, H.-H., Dinh, T., Wood, B., Nguyen Tuan, K., Mu, F., … Nguyen, N.-T. (2017). Single-Crystalline 3C-SiC anodically Bonded onto Glass: An Excellent Platform for High-Temperature Electronics and Bioapplications.
ACS Applied Materials and Interfaces,
9, 27365–27371.
-
Phan, H. P., Nguyen Tuan, K., Dinh, T., Iacopi, A., Hold, L., Shiddiky, M., … Nguyen, N.-T. (2017). Robust Free-Standing Nano-Thin SiC Membranes Enable Direct Photolithography for MEMS Sensing Applications.
Advanced Engineering Materials, 1700858–1–1700858–5.
-
Qamar, A., Dao, D., Dinh, T., Iacopi, A., Walker, G., Phan, H. P., … Dimitrijev, S. (2017). Piezo-Hall effect and fundamental piezo-Hall coefficients of single crystal n-type 3C-SiC(100) with low carrier concentration.
Applied Physics Letters,
110(16), 162903–1–162903–5.
-
Qamar, A., Dao, D., Han, J., Iacopi, A., Dinh, T., Phan, H. P., & Dimitrijev, S. (2017). Pseudo-Hall Effect in Single Crystal n-Type 3C-SiC(100) Thin Film.
Key Engineering Materials,
733, 3–7.
-
Sasi, V. V., Iqbal, A., Chaik, K., Iacopi, A., & Mohd-Yasin, F. (2017). RF Sputtering, Post-Annealing Treatment and Characterizations of ZnO (002) Thin Films on 3C-SiC (111)/Si (111) Substrates.
Micromachines,
8(5), 148–1–148–9.
-
Tanner, P., Iacopi, A., Phan, H. P., Dimitrijev, S., Hold, L., Chaik, K., … Nguyen, N.-T. (2017). Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications.
Scientific Reports,
7(1), 17734–1–17734–11.
-
Chai, J., Walker, G., Wang, L., Massoubre, D., & Iacopi, A. (2016). Effect of SiC-on-Si template residual stress on GaN residual stress and crystal quality.
Physica Status Solidi (B) Basic Research,
253(5), 824–828.
-
Haasmann, D., Amini Moghadam, H., Han, J., Aminbeidokhti, A., Iacopi, A., & Dimitrijev, S. (2016). Dipole Type Behavior of NO Grown Oxides on 4H–SiC.
Materials Science Forum,
858, 453–456.
-
Iqbal, A., Walker, G., Iacopi, A., & Mohd-Yasin, F. (2016). Controlled sputtering of AlN (002) and (101) crystal orientations on epitaxial 3C-SiC-on-Si (100) substrate.
Journal of Crystal Growth,
440, 76–80.
-
Sasi, V. V., Iqbal, A., Chaik, K., Tanner, P., Iacopi, A., & Mohd-Yasin, F. (2016). RF Sputtering of ZnO (002) Thin Films on Top of 3C-SiC-on-Si (100) Substrates for Low Cost Piezoelectric Devices. Presented at the EUROSENSORS XXX, Budapest, Hungary (2016).
-
Wang, L., Dimitrijev, S., Fissel, A., Walker, G., Chai, J., Hold, L., … Iacopi, A. (2016). Growth mechanism for alternating supply epitaxy: The unique pathway to achieve uniform silicon carbide films on multiple large-diameter silicon substrates.
RSC Advances,
6(20), 16662–16667.
-
Chai, J., Walker, G., Wang, L., Massoubre, D., Tan, S. H., Chaik, K., … Iacopi, A. (2015). Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers.
Scientific Reports,
5, 17811–1–17811–10.
-
Massoubre, D., Wang, L., Hold, L., Fernandes, A., Chai, J., Dimitrijev, S., & Iacopi, A. (2015). Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer.
Scientific Reports,
5, 17026–1–17026–8.
-
Wang, L., Dimitrijev, S., Iacopi, A., Hold, L., Walker, G., Chai, J., & Massoubre, D. (2015). Si Surface Preparation for Heteroepitaxial Growth of SiC Using in situ Oxidation.
Materials Science Forum,
821-823, 205–208.
-
Wang, L., Walker, G., Chai, J., Iacopi, A., Fernandes, A., & Dimitrijev, S. (2015). Kinetic surface roughening and wafer bow control in heteroepitaxial growth of 3C-SiC on Si(111) substrates.
Scientific Reports,
5, 15423–1–15423–8.
-
Brock, R., Iacopi, F., Iacopi, A., Hold, L., & Dauskardt, R. (2014). Highly compressed nano-layers in epitaxial silicon carbide membranes for MEMs sensors.
-
Haasmann, D., Dimitrijev, S., Han, J., & Iacopi, A. (2014). Growth of Gate Oxides on 4H–SiC by NO at Low Partial Pressures.
Materials Science Forum,
778-780, 627–630.
-
Iqbal, A., Chaik, K., Walker, G., Iacopi, A., Mohd-Yasin, F., & Dimitrijev, S. (2014). RF sputtering of polycrystalline (100), (002), and (101) oriented AlN on an epitaxial 3C-SiC (100) on Si(100) substrate.
Journal of Vacuum Science and Technology B,
32(6), 06F401 –1–06F401 –6.
-
Massoubre, D., Wang, L., Chai, J., Walker, G., Hold, L., Lobino, M., … Iacopi, A. (2014). Single-crystalline 3C-SiC thin-film on large Si substrate for photonic applications. In N. S. and T. Institute (Ed.), . Presented at the Nanotech 2014: Advanced Materials & Applications, Washington, DC; United States (2014).
-
Mishra, N., Hold, L., Iacopi, A., Gupta, B., Motta, N., & Iacopi, F. (2014). Controlling the surface roughness of epitaxial SiC on silicon.
Journal of Applied Physics,
115, 203501–1–203501–8.
-
Tanner, P., Wang, L., Dimitrijev, S., Han, J., Iacopi, A., Hold, L., & Walker, G. (2014). Novel Electrical Characterization of Thin 3C-SiC Films on Si Substrates.
Science of Advanced Materials,
6(7), 1542–1547.
-
Wang, L., Iacopi, A., Dimitrijev, S., Walker, G., Fernandes, A., Hold, L., & Chai, J. (2014). Misorientation dependent epilayer tilting and stress distribution in heteroepitaxially grown silicon carbide on silicon (111) substrate.
Thin Solid Films,
564, 39–44.
-
Iacopi, F., Brock, R. E., Iacopi, A., Hold, L., & H.Dauskardt, R. (2013). Evidence of a highly compressed nanolayer at the epitaxial silicon carbide interface with silicon.
Acta Materialia,
61(17), 6533–6540.
-
Iacopi, F., Kermany, A. R., Mishra, N., Walker, G., Iacopi, A., Dao, D., … Motta, N. (2013). The potential of graphene/silicon carbide composite microtransducers for sensing applications.
-
Iacopi, F., Walker, G., Wang, L., Malesys, L., Ma, S., Cunning, B., & Iacopi, A. (2013). Orientation-dependent stress relaxation in hetero-epitaxial 3C-SiC films.
Applied Physics Letters,
102, 011908–1–011908–4.
-
Massoubre, D., Wang, L., Chu, R., Guo, J., Chai, J., Walker, G., … Iacopi, A. (2013). 3C-SiC/AlN Distributed Bragg Reflector for GaN-based LEDs grown on large diameter silicon wafers. Presented at the ANFF Research Showcase 2013, Melbourne (2013).
-
Wang, L., Dimitrijev, S., Walker, G., Han, J., Iacopi, A., Tanner, P., … Iacopi, F. (2013). Color chart for thin SiC films grown on Si substrates.
Materials Science Forum,
740-742, 279–282.
-
Han, J., Dimitrijev, S., Wang, L., Iacopi, A., Qu, S., & Xu, X. (2011). InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate.
Materials Science Forum,
679-680, 801–803.
-
Wang, L., Dimitrijev, S., Han, J., Iacopi, A., Hold, L., Tanner, P., & Harrison, B. (2011). Growth of 3C-SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C.
Thin Solid Films,
519(19), 6443–6446.
-
Wang, L., Dimitrijev, S., Han, J., Tanner, P., Iacopi, A., & Hold, L. (2011). Demonstration of p-type 3C-SiC grown on 150 mm Si(1 0 0) substrates by atomic-layer epitaxy at 1000 °C.
Journal of Crystal Growth,
329(1), 67–70.
